Please use this identifier to cite or link to this item: https://doi.org/10.1039/c0nr00437e
Title: Thermal contraction in silicon nanowires at low temperatures
Authors: Jiang, J.-W. 
Wang, J.-S. 
Li, B. 
Issue Date: Nov-2010
Citation: Jiang, J.-W., Wang, J.-S., Li, B. (2010-11). Thermal contraction in silicon nanowires at low temperatures. Nanoscale 2 (12) : 2864-2867. ScholarBank@NUS Repository. https://doi.org/10.1039/c0nr00437e
Abstract: The thermal expansion effect of silicon nanowires (SiNW) in [100], [110] and [111] directions with different sizes is theoretically investigated. At low temperatures, all SiNW studied exhibit a thermal contraction effect due to the lowest energy of the bending vibration mode which has a negative effect on the coefficient of thermal expansion (CTE). The CTE in [110] direction is distinctly larger than the other two growth directions because of the anisotropy of the bending mode in SiNW. Our study reveals that CTE decreases with an increase of the structure ratio γ = length/diameter, and is negative in the whole temperature range with γ = 1.3. © 2010 The Royal Society of Chemistry.
Source Title: Nanoscale
URI: http://scholarbank.nus.edu.sg/handle/10635/98352
ISSN: 20403364
DOI: 10.1039/c0nr00437e
Appears in Collections:Staff Publications

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