Theoretical prediction of the structure and properties of Sn 3N 4

Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1788836

Title:	Theoretical prediction of the structure and properties of Sn 3N 4
Authors:	Huang, M. Feng, Y.P.
Issue Date:	1-Oct-2004
Citation:	Huang, M., Feng, Y.P. (2004-10-01). Theoretical prediction of the structure and properties of Sn 3N 4. Journal of Applied Physics 96 (7) : 4015-4017. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1788836
Abstract:	The first-principle calculations carried out to study the structure and properties of Sn 3N 4 were derived. The calculations were based on plane-wave pseudopotential and local-density approximation (LDA). It was observed that the γ phase was found to be the most stable among the structures and has high density at zero pressure. It was concluded that the band structure calculations showed semiconducting behaviors of Sn 3N 4 within LDA.
Source Title:	Journal of Applied Physics
URI:	http://scholarbank.nus.edu.sg/handle/10635/98334
ISSN:	00218979
DOI:	10.1063/1.1788836
Appears in Collections:	Staff Publications

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