Please use this identifier to cite or link to this item:
|Title:||Theoretical prediction of the structure and properties of Sn 3N 4|
|Citation:||Huang, M., Feng, Y.P. (2004-10-01). Theoretical prediction of the structure and properties of Sn 3N 4. Journal of Applied Physics 96 (7) : 4015-4017. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1788836|
|Abstract:||The first-principle calculations carried out to study the structure and properties of Sn 3N 4 were derived. The calculations were based on plane-wave pseudopotential and local-density approximation (LDA). It was observed that the γ phase was found to be the most stable among the structures and has high density at zero pressure. It was concluded that the band structure calculations showed semiconducting behaviors of Sn 3N 4 within LDA.|
|Source Title:||Journal of Applied Physics|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Sep 20, 2018
WEB OF SCIENCETM
checked on Sep 5, 2018
checked on Jun 1, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.