Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/98320
Title: The structure of the beryllium-hydrogen complex in silicon
Authors: Chia, L.S.
Goh, N.K.
Ong, C.K. 
Keywords: Beryllium-hydrogen complex in silicon
CNDO
Issue Date: Apr-1992
Source: Chia, L.S.,Goh, N.K.,Ong, C.K. (1992-04). The structure of the beryllium-hydrogen complex in silicon. Journal of Physics and Chemistry of Solids 53 (4) : 585-589. ScholarBank@NUS Repository.
Abstract: The total energies of the (Be, H) complex in Si have been calculated, when the H atom is moving along the three major axes with the Be atom at a substitutional site, using a self-consistent semi-empirical method. The local minimum for the H atom on the (110) plane has also been investigated. The global minimum is found when the H atom is located near the C-site. However, we find that an activation of about 0.49 eV is needed for the H atom to diffuse thermally from one C-site to the other. Our results further indicate that the H atom has a stronger affinity with the Be rather than the Si atom. A possible mechanism for the passivation of the Be atom by the H atom in crystalline Si is also discussed. © 1992.
Source Title: Journal of Physics and Chemistry of Solids
URI: http://scholarbank.nus.edu.sg/handle/10635/98320
ISSN: 00223697
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

Page view(s)

28
checked on Apr 20, 2018

Google ScholarTM

Check


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.