Please use this identifier to cite or link to this item:
|Title:||The origin of sub-bands in the Raman D-band of graphene|
|Citation:||Luo, Z., Cong, C., Zhang, J., Xiong, Q., Yu, T. (2012-09). The origin of sub-bands in the Raman D-band of graphene. Carbon 50 (11) : 4252-4258. ScholarBank@NUS Repository. https://doi.org/10.1016/j.carbon.2012.05.008|
|Abstract:||In Raman spectroscopy investigations of defective suspended graphene, splitting in the D band is observed. Four double resonance Raman scattering processes: the outer and inner scattering processes, as well as the scattering processes with electrons first scattered by phonons ("phonon-first") or by defects ("defect-first"), are found to be responsible for these features of the D band. The D sub-bands associated with the outer and inner processes merge with increasing defect concentration. However a Stokes/anti-Stokes Raman study indicates that the splitting of the D band due to the separate "phonon-first" and "defect-first" processes is valid for suspended graphene. For graphene samples on a SiO 2/Si substrate, the sub-bands of D band merge due to the increased Raman broadening parameter resulting from the substrate doping. Moreover, the merging of the sub-bands shows excitation energy dependence, which can be understood by considering the energy dependent lifetime and/or scattering rate of photo-excited carriers in the Raman scattering process. © 2012 Elsevier Ltd. All rights reserved.|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Sep 19, 2018
WEB OF SCIENCETM
checked on Sep 5, 2018
checked on Jun 1, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.