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|Title:||The origin of sub-bands in the Raman D-band of graphene|
|Citation:||Luo, Z., Cong, C., Zhang, J., Xiong, Q., Yu, T. (2012-09). The origin of sub-bands in the Raman D-band of graphene. Carbon 50 (11) : 4252-4258. ScholarBank@NUS Repository. https://doi.org/10.1016/j.carbon.2012.05.008|
|Abstract:||In Raman spectroscopy investigations of defective suspended graphene, splitting in the D band is observed. Four double resonance Raman scattering processes: the outer and inner scattering processes, as well as the scattering processes with electrons first scattered by phonons ("phonon-first") or by defects ("defect-first"), are found to be responsible for these features of the D band. The D sub-bands associated with the outer and inner processes merge with increasing defect concentration. However a Stokes/anti-Stokes Raman study indicates that the splitting of the D band due to the separate "phonon-first" and "defect-first" processes is valid for suspended graphene. For graphene samples on a SiO 2/Si substrate, the sub-bands of D band merge due to the increased Raman broadening parameter resulting from the substrate doping. Moreover, the merging of the sub-bands shows excitation energy dependence, which can be understood by considering the energy dependent lifetime and/or scattering rate of photo-excited carriers in the Raman scattering process. © 2012 Elsevier Ltd. All rights reserved.|
|Appears in Collections:||Staff Publications|
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