Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.jcrysgro.2003.10.068
Title: The formation of Ge nanocrystals in a metal-insulator-semiconductor structure and its memory effect
Authors: Heng, C.L.
Liu, Y.J. 
Wee, A.T.S. 
Finstad, T.G.
Keywords: A1. Ge nanocrystals
A3. Electron-beam evaporation
A3. Rapid thermal annealing
B3. Memory effect
Issue Date: 15-Feb-2004
Citation: Heng, C.L., Liu, Y.J., Wee, A.T.S., Finstad, T.G. (2004-02-15). The formation of Ge nanocrystals in a metal-insulator-semiconductor structure and its memory effect. Journal of Crystal Growth 262 (1-4) : 95-104. ScholarBank@NUS Repository. https://doi.org/10.1016/j.jcrysgro.2003.10.068
Abstract: After rapid thermal annealing of an ultra-thin germanium (Ge) layer in a tri-layer insulator structure at 1000°C in argon, the formation of Ge nanocrystals in the structure has been investigated by using high-resolution transmission electron microscopy, X-ray photoelectron spectroscopy and atomic force microscopy. It was found that the Ge layer in the as prepared sample is a mixture of amorphous Ge, GeO2 and Ge suboxide. After 10s annealing, Ge is distributed over a much wider amorphous layer than the as prepared case and a few Ge nanocrystals were observed. The density of Ge nanocrystals increases with increasing annealing time from 10 to 200s, and then decreases as the time increases further to 400s. A possible mechanism for the formation of Ge nanocrystals was discussed. Current-voltage and capacitance-voltage measurements show that the device with Ge nanocrystals has a pronounced charge storage capability. The electrical charge stored in the device reaches a maximum value when the annealing time increases from 10 to 200s, and then decreases as the annealing time increases further to 400s. © 2003 Elsevier B.V. All rights reserved.
Source Title: Journal of Crystal Growth
URI: http://scholarbank.nus.edu.sg/handle/10635/98271
ISSN: 00220248
DOI: 10.1016/j.jcrysgro.2003.10.068
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