Please use this identifier to cite or link to this item:
|Title:||The decomposition mechanism of SiO2 with the deposition of oxygen-deficient M(Hf or Zr)Ox films|
|Citation:||Li, Q., Wang, S.J., Lim, P.C., Chai, J.W., Huan, A.C.H., Ong, C.K. (2004-09). The decomposition mechanism of SiO2 with the deposition of oxygen-deficient M(Hf or Zr)Ox films. Thin Solid Films 462-463 (SPEC. ISS.) : 106-109. ScholarBank@NUS Repository. https://doi.org/10.1016/j.tsf.2004.05.009|
|Abstract:||The dynamic process of the reactions during deposition of M(Hf or Zr)O 2 thin films on SiO2-covered silicon substrate in oxygen deficient conditions has been investigated. A series of reactions across the interface were identified with thermodynamic arguments and with X-ray Photoelectron Spectroscopy (XPS) and transmission electron microscopy (TEM) analyses. The oxygen deficient MOx|
|Source Title:||Thin Solid Films|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Sep 19, 2018
WEB OF SCIENCETM
checked on Sep 10, 2018
checked on Jul 6, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.