Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3212966
Title: Terahertz carrier dynamics and dielectric properties of GaN epilayers with different carrier concentrations
Authors: Guo, H.C.
Zhang, X.H.
Liu, W.
Yong, A.M.
Tang, S.H. 
Issue Date: 2009
Citation: Guo, H.C., Zhang, X.H., Liu, W., Yong, A.M., Tang, S.H. (2009). Terahertz carrier dynamics and dielectric properties of GaN epilayers with different carrier concentrations. Journal of Applied Physics 106 (6) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3212966
Abstract: Using terahertz time-domain spectroscopy, we measured the complex conductivity and dielectric function of n -type GaN with various carrier concentrations on sapphire substrate. The measured complex conductivity, which is due to the free carriers, is well fitted by simple Drude model. The contribution from the lattice vibration to the complex dielectric function increases with the decrease in free carrier concentration. A better fitting of the frequency-dependent complex dielectric response was obtained by considering both of the Drude and the classical damped oscillator model. © 2009 American Institute of Physics.
Source Title: Journal of Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/98233
ISSN: 00218979
DOI: 10.1063/1.3212966
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