Please use this identifier to cite or link to this item:
|Title:||Terahertz carrier dynamics and dielectric properties of GaN epilayers with different carrier concentrations|
|Citation:||Guo, H.C., Zhang, X.H., Liu, W., Yong, A.M., Tang, S.H. (2009). Terahertz carrier dynamics and dielectric properties of GaN epilayers with different carrier concentrations. Journal of Applied Physics 106 (6) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3212966|
|Abstract:||Using terahertz time-domain spectroscopy, we measured the complex conductivity and dielectric function of n -type GaN with various carrier concentrations on sapphire substrate. The measured complex conductivity, which is due to the free carriers, is well fitted by simple Drude model. The contribution from the lattice vibration to the complex dielectric function increases with the decrease in free carrier concentration. A better fitting of the frequency-dependent complex dielectric response was obtained by considering both of the Drude and the classical damped oscillator model. © 2009 American Institute of Physics.|
|Source Title:||Journal of Applied Physics|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Sep 17, 2018
WEB OF SCIENCETM
checked on Sep 5, 2018
checked on Jul 27, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.