Please use this identifier to cite or link to this item:
|Title:||Synthesis and properties of close packed ZnO:Al submicro-rods deposited by pulsed laser ablation|
|Keywords:||Pulsed laser deposition|
Transparent conducting semiconductor
|Citation:||Liu, Z.W., Ong, C.K. (2012-07-20). Synthesis and properties of close packed ZnO:Al submicro-rods deposited by pulsed laser ablation. Vacuum 86 (12) : 1924-1929. ScholarBank@NUS Repository. https://doi.org/10.1016/j.vacuum.2012.03.060|
|Abstract:||Al-doped ZnO (AZO) semiconducting thin films consisting of perpendicularly aligned submicro-rods were deposited on silicon substrate by conventional pulsed laser ablation. No catalyst was used in this process. It was found that the rod structure can be grown at relatively high oxygen pressures (1-20 Torr) and relatively high substrate temperatures (550-700°C). Low resistivity and high carrier concentration can be obtained in these Al-doped ZnO rods with relatively high Al concentrations. Increasing Al doping reduces the electric resistivity and increase carrier concentration. The photoluminescence property measurement indicates an increased UV emission with a small amount Al doping and reduced UV emission with further increase of Al concentration. © 2012 Elsevier Ltd. All rights reserved.|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on May 22, 2018
WEB OF SCIENCETM
checked on May 7, 2018
checked on Feb 25, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.