Please use this identifier to cite or link to this item: https://doi.org/11/303
Title: Synthesis and characterization of Y2O3:Eu3+ thin films on silicon substrate by pulsed laser ablation
Authors: Gang, G. 
Ong, P.P. 
Chen, C.
Roth, S.
Issue Date: 7-Jun-2000
Source: Gang, G.,Ong, P.P.,Chen, C.,Roth, S. (2000-06-07). Synthesis and characterization of Y2O3:Eu3+ thin films on silicon substrate by pulsed laser ablation. Journal of Physics D: Applied Physics 33 (11) : 1263-1266. ScholarBank@NUS Repository. https://doi.org/11/303
Abstract: Y2O3:Eu3+ thin films were prepared by pulsed laser ablation on silicon (100) substrate. The relative photoluminescence intensity dependence on annealing time was studied. The microstructures of annealing thin films were studied by atomic force microscopy. It was observed that the photoluminescence intensity at 611 nm from thin film annealed at 1000°C for 4 h tended to saturate, the average crystal size of the thin film was estimated to be 71 nm by x-ray diffraction measurements.
Source Title: Journal of Physics D: Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/98177
ISSN: 00223727
DOI: 11/303
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

Page view(s)

19
checked on Jan 20, 2018

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.