Please use this identifier to cite or link to this item:
https://doi.org/10.1002/sia.2058
DC Field | Value | |
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dc.title | Surface transient effects in ultralow-energy O2 + sputtering of silicon | |
dc.contributor.author | Chanbasha, A.R. | |
dc.contributor.author | Wee, A.T.S. | |
dc.date.accessioned | 2014-10-16T09:43:33Z | |
dc.date.available | 2014-10-16T09:43:33Z | |
dc.date.issued | 2005-07 | |
dc.identifier.citation | Chanbasha, A.R., Wee, A.T.S. (2005-07). Surface transient effects in ultralow-energy O2 + sputtering of silicon. Surface and Interface Analysis 37 (7) : 628-632. ScholarBank@NUS Repository. https://doi.org/10.1002/sia.2058 | |
dc.identifier.issn | 01422421 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/98146 | |
dc.description.abstract | It is known that by lowering the impact energy the sputter rate and surface transient width in SIMS will be reduced. However, few studies have been done at ultralow energies over a wide range of impact angles. This study examines the dependence of sputter rate and transient width as a function of O 2 + primary ion energy (Ep = 250 eV, 500 eV and 1 keV) and incidence angles of 0-70°. The instrument used is the Atomika 4500 SIMS depth profiler and the sample was Si with 10 delta-layers of Si 0.7Ge0.3. We observed that the lowest transient width of 0.7 nm is obtainable at normal and near-normal incidence with Ep ∼ 250 eV and Ep ∼ 500 eV. There is no significant improvement in transient width going down in energy from Ep ∼ 500 to ∼250 eV. The onset of roughening is also not obvious at Ep ∼ 250 eV over the whole angular range studied. Although the sputter rate during the surface transient is normally different from that at steady state, only at Ep ∼ 250 eV was it observed that the sputter rate remained fairly independent of depth. We conclude that the best working ranges to achieve a narrow transient width and accurate depth calibration are at Ep ∼ 250 eV/0° < θ < 20° and 500 eV/0° < θ < 10°. Copyright © 2005 John Wiley & Sons, Ltd. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1002/sia.2058 | |
dc.source | Scopus | |
dc.subject | Secondary ion mass spectroscopy | |
dc.subject | Sputter rate | |
dc.subject | Surface transient | |
dc.subject | Ultralow energy | |
dc.type | Article | |
dc.contributor.department | PHYSICS | |
dc.description.doi | 10.1002/sia.2058 | |
dc.description.sourcetitle | Surface and Interface Analysis | |
dc.description.volume | 37 | |
dc.description.issue | 7 | |
dc.description.page | 628-632 | |
dc.description.coden | SIAND | |
dc.identifier.isiut | 000230222600005 | |
Appears in Collections: | Staff Publications |
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