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|Title:||Surface transfer doping of diamond by MoO3: A combined spectroscopic and Hall measurement study|
|Citation:||Russell, S.A.O., Cao, L., Qi, D., Tallaire, A., Crawford, K.G., Wee, A.T.S., Moran, D.A.J. (2013-11-11). Surface transfer doping of diamond by MoO3: A combined spectroscopic and Hall measurement study. Applied Physics Letters 103 (20) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4832455|
|Abstract:||Surface transfer doping of diamond has been demonstrated using MoO 3 as a surface electron acceptor material. Synchrotron-based high resolution photoemission spectroscopy reveals that electrons are transferred from the diamond surface to MoO3, leading to the formation of a sub-surface quasi 2-dimensional hole gas within the diamond. Ex-situ electrical characterization demonstrated an increase in hole carrier concentration from 1.00 × 1013/cm2 for the air-exposed hydrogen-terminated diamond surface to 2.16 × 1013/cm 2 following MoO3 deposition. This demonstrates the potential to improve the stability and performance of hydrogen-terminated diamond electronic devices through the incorporation of high electron affinity transition metal oxides. © 2013 AIP Publishing LLC.|
|Source Title:||Applied Physics Letters|
|Appears in Collections:||Staff Publications|
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