Please use this identifier to cite or link to this item:
|Title:||Surface transfer doping of diamond by MoO3: A combined spectroscopic and Hall measurement study|
|Citation:||Russell, S.A.O., Cao, L., Qi, D., Tallaire, A., Crawford, K.G., Wee, A.T.S., Moran, D.A.J. (2013-11-11). Surface transfer doping of diamond by MoO3: A combined spectroscopic and Hall measurement study. Applied Physics Letters 103 (20) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4832455|
|Abstract:||Surface transfer doping of diamond has been demonstrated using MoO 3 as a surface electron acceptor material. Synchrotron-based high resolution photoemission spectroscopy reveals that electrons are transferred from the diamond surface to MoO3, leading to the formation of a sub-surface quasi 2-dimensional hole gas within the diamond. Ex-situ electrical characterization demonstrated an increase in hole carrier concentration from 1.00 × 1013/cm2 for the air-exposed hydrogen-terminated diamond surface to 2.16 × 1013/cm 2 following MoO3 deposition. This demonstrates the potential to improve the stability and performance of hydrogen-terminated diamond electronic devices through the incorporation of high electron affinity transition metal oxides. © 2013 AIP Publishing LLC.|
|Source Title:||Applied Physics Letters|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Jul 17, 2018
WEB OF SCIENCETM
checked on Jun 20, 2018
checked on May 25, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.