Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/98142
Title: Surface states of GaP (110)
Authors: Ong, C.K. 
Low, K.C.
Keywords: GaP
semiconductor surface
Surface states
Issue Date: 1991
Source: Ong, C.K.,Low, K.C. (1991). Surface states of GaP (110). Journal of Physics and Chemistry of Solids 52 (5) : 705-708. ScholarBank@NUS Repository.
Abstract: Chadi's tight-binding total energy algorithm was used to study the reconstruction of the GaP (110) surface and its intrinsic occupied and unoccupied states. Assuming a rotation-relaxation model, the optimal surface atomic geometry was obtained by minimizing the total energy of the system. The angle of rotation obtained, ω = 22°, is near the experimental value of 27.5°. The features of the surface electronic states were determined and described. The calculated intrinsic occupied surface states are in excellent agreement with the experimental data and those for the unoccupied states are about 30% higher than the results of inverse photo-emission experiments. © 1991.
Source Title: Journal of Physics and Chemistry of Solids
URI: http://scholarbank.nus.edu.sg/handle/10635/98142
ISSN: 00223697
Appears in Collections:Staff Publications

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