Please use this identifier to cite or link to this item:
|Title:||Surface chemical states on 3C-SiC/Si epilayers|
|Authors:||Wee, A.T.S. |
|Source:||Wee, A.T.S.,Feng, Z.C.,Hng, H.H.,Tan, K.L.,Tin, C.C.,Hu, R.,Coston, R. (1994-12-01). Surface chemical states on 3C-SiC/Si epilayers. Applied Surface Science 81 (4) : 377-385. ScholarBank@NUS Repository.|
|Abstract:||A series of 3C-SiC/Si(100) films grown by chemical vapour deposition (CVD) with different growth times and hence film thicknesses, are studied by X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS). XPS showed that the surfaces of the samples consist of Si oxides (SiO2 and SiO2 where x|
|Source Title:||Applied Surface Science|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Mar 9, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.