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|Title:||Surface chemical states of heteroepitaxial nitride films on sapphire by metalorganic chemical vapor deposition|
Metalorganic chemical vapor deposition
X-ray photoelectron spectroscopy
|Citation:||Li, K.,Feng, Z.C.,Yang, C.-C.,Lin, J. (2004-08). Surface chemical states of heteroepitaxial nitride films on sapphire by metalorganic chemical vapor deposition. International Journal of Nanoscience 3 (4-5) : 655-661. ScholarBank@NUS Repository.|
|Abstract:||Surface chemical states of GaN, AlGaN and InGaN by metalorganic chemical vapor deposition, and the influence of different dopants are studied with X-ray Photoelectron Spectroscopy (XPS). The results show that for most of the samples the N 1s peak can be fitted with a dominant GaN peak and a small N H peak, while Ga 3d can be deconvoluted into three peaks from elemental Ga, GaN and Ga 2O 3. Si-doping appears to have small influence on the surface chemical states of GaN while the influence of Mg-doping appears larger. In addition to a change in the component intensities, Mg-doping also causes the N 1s and Ga 3d peaks to broaden. The ternary AlGaN sample shows aluminum surface segregation, while the undoped InGaN shows indium surface deficiency.|
|Source Title:||International Journal of Nanoscience|
|Appears in Collections:||Staff Publications|
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