Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/98125
Title: Surface chemical states of heteroepitaxial nitride films on sapphire by metalorganic chemical vapor deposition
Authors: Li, K.
Feng, Z.C.
Yang, C.-C.
Lin, J. 
Keywords: GaN
Metalorganic chemical vapor deposition
X-ray photoelectron spectroscopy
Issue Date: Aug-2004
Citation: Li, K.,Feng, Z.C.,Yang, C.-C.,Lin, J. (2004-08). Surface chemical states of heteroepitaxial nitride films on sapphire by metalorganic chemical vapor deposition. International Journal of Nanoscience 3 (4-5) : 655-661. ScholarBank@NUS Repository.
Abstract: Surface chemical states of GaN, AlGaN and InGaN by metalorganic chemical vapor deposition, and the influence of different dopants are studied with X-ray Photoelectron Spectroscopy (XPS). The results show that for most of the samples the N 1s peak can be fitted with a dominant GaN peak and a small N H peak, while Ga 3d can be deconvoluted into three peaks from elemental Ga, GaN and Ga 2O 3. Si-doping appears to have small influence on the surface chemical states of GaN while the influence of Mg-doping appears larger. In addition to a change in the component intensities, Mg-doping also causes the N 1s and Ga 3d peaks to broaden. The ternary AlGaN sample shows aluminum surface segregation, while the undoped InGaN shows indium surface deficiency.
Source Title: International Journal of Nanoscience
URI: http://scholarbank.nus.edu.sg/handle/10635/98125
ISSN: 0219581X
Appears in Collections:Staff Publications

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