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|Title:||Surface and interface studies of titanium silicide formation|
|Authors:||Wee, A.T.S. |
|Keywords:||Rutherford backscattering spectroscopy; secondary ion mass spectrometry (SIMS)|
|Citation:||Wee, A.T.S.,Huan, A.C.H.,Osipowicz, T.,Lee, K.K.,Thian, W.H.,Tan, K.L.,Hogan, R. (1996-09-01). Surface and interface studies of titanium silicide formation. Thin Solid Films 283 (1-2) : 130-134. ScholarBank@NUS Repository.|
|Abstract:||Secondary ion mass spectrometry (SIMS), Rutherford backscattering spectroscopy (RBS) and X-ray photoelectron spectroscopy (XPS) are used to investigate Ti suicide formation mechanisms on a series of Ti on Si thin-films annealed in ultrahigh vacuum (UHV) at different temperatures and durations. The competition between oxygen diffusion and the suicide formation reaction (the so-called 'snowplough' effect) is observed directly, as well as a Ti-Si-O layer. The results from these controlled experiments are compared with those from Ti-silicide films formed under rapid thermal annealing (RTA) conditions in a production furnace, with and without a TiW barrier layer. The TiW layer is shown to act as an effective barrier to silicon and oxygen out-diffusion, as well as the incorporation of ambient gases.|
|Source Title:||Thin Solid Films|
|Appears in Collections:||Staff Publications|
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