Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/98123
Title: Surface and interface studies of titanium silicide formation
Authors: Wee, A.T.S. 
Huan, A.C.H. 
Osipowicz, T. 
Lee, K.K.
Thian, W.H.
Tan, K.L. 
Hogan, R.
Keywords: Rutherford backscattering spectroscopy; secondary ion mass spectrometry (SIMS)
Silicides
Titanium
Issue Date: 1-Sep-1996
Source: Wee, A.T.S.,Huan, A.C.H.,Osipowicz, T.,Lee, K.K.,Thian, W.H.,Tan, K.L.,Hogan, R. (1996-09-01). Surface and interface studies of titanium silicide formation. Thin Solid Films 283 (1-2) : 130-134. ScholarBank@NUS Repository.
Abstract: Secondary ion mass spectrometry (SIMS), Rutherford backscattering spectroscopy (RBS) and X-ray photoelectron spectroscopy (XPS) are used to investigate Ti suicide formation mechanisms on a series of Ti on Si thin-films annealed in ultrahigh vacuum (UHV) at different temperatures and durations. The competition between oxygen diffusion and the suicide formation reaction (the so-called 'snowplough' effect) is observed directly, as well as a Ti-Si-O layer. The results from these controlled experiments are compared with those from Ti-silicide films formed under rapid thermal annealing (RTA) conditions in a production furnace, with and without a TiW barrier layer. The TiW layer is shown to act as an effective barrier to silicon and oxygen out-diffusion, as well as the incorporation of ambient gases.
Source Title: Thin Solid Films
URI: http://scholarbank.nus.edu.sg/handle/10635/98123
ISSN: 00406090
Appears in Collections:Staff Publications

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