Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/98066
Title: Structural, optical, and surface science studies of 4H-SiC epilayers grown by low pressure chemical vapor deposition
Authors: Feng, Z.C.
Rohatgi, A.
Tin, C.C.
Hu, R.
Wee, A.T.S. 
Se, K.P.
Keywords: 4H-SiC
Fourier infrared reflectance
Low pressure chemical vapor deposition
Raman scattering
X-ray diffraction
X-ray photoelectron spectroscopy
Issue Date: May-1996
Source: Feng, Z.C.,Rohatgi, A.,Tin, C.C.,Hu, R.,Wee, A.T.S.,Se, K.P. (1996-05). Structural, optical, and surface science studies of 4H-SiC epilayers grown by low pressure chemical vapor deposition. Journal of Electronic Materials 25 (5) : 917-923. ScholarBank@NUS Repository.
Abstract: A series of epitaxial 4H-SiC thin films grown by low pressure chemical vapor deposition (LPCVD) were characterized using various techniques, including x-ray diffraction (XRD), Fourier transform infrared (FTIR) reflectance, Raman scattering, and x-ray photoelectron spectroscopy (XPS). The epilayers were grown on heavily doped n-type 4H-SiC substrates using different gas compositions. XRD showed that the thin films were single crystal. Raman scattering identified the films to be 4H polytype. FTIR reflectivity spectra indicated improvement in the film quality over that of the substrate and atmospheric pressure-grown epilayers. XPS scans revealed the existence of Si, C, and O along with C-contaminant species in the form of CH and carbon oxides. Variations in crystalline quality, optical, and surface properties with the growth conditions were studied. This study also provides an important comparison between low and atmospheric pressure-grown 4H-SiC epilayers.
Source Title: Journal of Electronic Materials
URI: http://scholarbank.nus.edu.sg/handle/10635/98066
ISSN: 03615235
Appears in Collections:Staff Publications

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