Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.ssc.2004.08.020
Title: Structural phase transition of boron nitride compound
Authors: Al-Douri, Y. 
Keywords: A. Semiconductors
D. Crystal binding and equation of state
D. Electronic band structures
D. Phase transitions
Issue Date: Nov-2004
Citation: Al-Douri, Y. (2004-11). Structural phase transition of boron nitride compound. Solid State Communications 132 (7) : 465-470. ScholarBank@NUS Repository. https://doi.org/10.1016/j.ssc.2004.08.020
Abstract: The full-potential band-structure scheme based on the linear combination of overlapping nonorthogonal local-orbital (FPLO) is used. The crystal potential and density are represented as a lattice sum of local overlapping nonspherical contributions. The energetic transitions of BN of zinc-blende and wurtzite structures are calculated using the band structure scheme. The energy gap at ambient pressure is found to be indirect for the two structures. The structural properties of two structures of BN are (obtained from the total energy calculations) and the total density of states are calculated. The phase transition parameter of BN is investigated. The ionicity character of BN has been calculated to test the validity of our recent models. The results are in reasonable agreement with experimental and other theoretical results. © 2004 Elsevier Ltd. All rights reserved.
Source Title: Solid State Communications
URI: http://scholarbank.nus.edu.sg/handle/10635/98060
ISSN: 00381098
DOI: 10.1016/j.ssc.2004.08.020
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