Please use this identifier to cite or link to this item:
|Title:||Strain-mediated uniform islands in stacked Ge/Si(001) layers|
|Authors:||Xu, M. |
Scanning tunneling microscopy
|Citation:||Xu, M., Jeyanthinath, M., Wang, X.-S., Jia, J., Xue, Q. (2004-11). Strain-mediated uniform islands in stacked Ge/Si(001) layers. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 43 (11 A) : 7411-7414. ScholarBank@NUS Repository. https://doi.org/10.1143/JJAP.43.7411|
|Abstract:||The role of a Si spacer layer in improving the uniformity of multilayer coherent Ge quantum dots on Si(001) is investigated using scanning tunneling microscopy. Deposition of the Si spacer layer at room temperature and subsequent annealing lead to the formation of (001)-oriented Si mesas on top of Ge islands (pyramids and huts). One mesa forms when the island beneath is pyramid-like, whereas a few mesas form when the island beneath is an elongated hut. The mesas are found to be preferential nucleation sites for the Ge islands in consecutive stacked layers. The vertical-pyramid-replicating and hut-breaking processes play key roles in the improvement of island size, shape and spacing uniformity.|
|Source Title:||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Jan 18, 2019
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.