Please use this identifier to cite or link to this item:
|Title:||Strain profiling of HfO2/Si(001) interface with high-resolution Rutherford backscattering spectroscopy|
|Citation:||Nakajima, K., Joumori, S., Suzuki, M., Kimura, K., Osipowicz, T., Tok, K.L., Zheng, J.Z., See, A., Zhang, B.C. (2003-07-14). Strain profiling of HfO2/Si(001) interface with high-resolution Rutherford backscattering spectroscopy. Applied Physics Letters 83 (2) : 296-298. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1592310|
|Abstract:||High resolution Rutherford backscattering spectroscopy was used for the strain profiling of HfO2/Si(001) interface. It was found that the Si lattice was compressed in the vertical direction around the interface. The maximum strain was observed to be about 1% at the interface and the strained region was found to extend to approximately 3 nm from the interface.|
|Source Title:||Applied Physics Letters|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Aug 13, 2018
WEB OF SCIENCETM
checked on Jul 4, 2018
checked on Aug 10, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.