Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1592310
Title: Strain profiling of HfO2/Si(001) interface with high-resolution Rutherford backscattering spectroscopy
Authors: Nakajima, K.
Joumori, S.
Suzuki, M.
Kimura, K.
Osipowicz, T. 
Tok, K.L.
Zheng, J.Z.
See, A.
Zhang, B.C.
Issue Date: 14-Jul-2003
Citation: Nakajima, K., Joumori, S., Suzuki, M., Kimura, K., Osipowicz, T., Tok, K.L., Zheng, J.Z., See, A., Zhang, B.C. (2003-07-14). Strain profiling of HfO2/Si(001) interface with high-resolution Rutherford backscattering spectroscopy. Applied Physics Letters 83 (2) : 296-298. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1592310
Abstract: High resolution Rutherford backscattering spectroscopy was used for the strain profiling of HfO2/Si(001) interface. It was found that the Si lattice was compressed in the vertical direction around the interface. The maximum strain was observed to be about 1% at the interface and the strained region was found to extend to approximately 3 nm from the interface.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/98031
ISSN: 00036951
DOI: 10.1063/1.1592310
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