Please use this identifier to cite or link to this item: https://doi.org/10.1088/1674-1056/19/10/106102
Title: STM observation of pit formation and evolution during the epitaxial growth of Si on Si(001) surface
Authors: Xu, M.-J.
Mayandi, J.
Wang, X.-S. 
Jia, J.-F.
Xue, Q.-K.
Dou, X.-M.
Keywords: Facet
Homoepitaxy
Pit
Si(001)
Issue Date: Oct-2010
Citation: Xu, M.-J., Mayandi, J., Wang, X.-S., Jia, J.-F., Xue, Q.-K., Dou, X.-M. (2010-10). STM observation of pit formation and evolution during the epitaxial growth of Si on Si(001) surface. Chinese Physics B 19 (10) : -. ScholarBank@NUS Repository. https://doi.org/10.1088/1674-1056/19/10/106102
Abstract: Pit formation and surface morphological evolution in Si(001) homoepitaxy are investigated by using scanning tunneling microscopy. Anti-phase boundary is found to give rise to initial generation of pits bound by bunched DB steps. The terraces break up and are reduced to a critical nucleus size with pit formation. Due to anisotropic kinetics, a downhill bias diffusion current, which is larger along the dimer rows through the centre area of the terrace than through the area close to the edge, leads to the prevalence of pits bound by {101} facets. Subsequent annealing results in a shape transition from {101}-faceted pits to multi-faceted pits. © 2010 Chinese Physical Society and IOP Publishing Ltd.
Source Title: Chinese Physics B
URI: http://scholarbank.nus.edu.sg/handle/10635/98026
ISSN: 16741056
DOI: 10.1088/1674-1056/19/10/106102
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