Please use this identifier to cite or link to this item: https://doi.org/10.1039/c2jm35006h
Title: Stepped-surfaced GeSe2 nanobelts with high-gain photoconductivity
Authors: Mukherjee, B.
Hu, Z.
Zheng, M.
Cai, Y. 
Feng, Y.P. 
Tok, E.S. 
Sow, C.H. 
Issue Date: 21-Dec-2012
Citation: Mukherjee, B., Hu, Z., Zheng, M., Cai, Y., Feng, Y.P., Tok, E.S., Sow, C.H. (2012-12-21). Stepped-surfaced GeSe2 nanobelts with high-gain photoconductivity. Journal of Materials Chemistry 22 (47) : 24882-24888. ScholarBank@NUS Repository. https://doi.org/10.1039/c2jm35006h
Abstract: Single crystalline stepped-surfaced GeSe2 nanobelts (NBs) were synthesized by vapor transport and deposition method with the presence of Au catalyst. The NBs were grown via VLS mechanism with catalytic Au-Ge-Se alloy droplet formed at the tip of the NBs. The dynamic reshaping of the catalyst particle leads to formation of steps along the NB. Photodetectors comprising individually isolated NBs were fabricated to study their photodetection properties. The photoresponsivity of the devices was investigated at four different excitation wavelengths of 405 nm, 532 nm, 808 nm and 1064 nm. High photoresponsivity of ∼1040 A W-1 and a photoconductive gain of ∼121800% was achieved at a wavelength of 1064 nm, suggesting that the excitation to defect-related energy states near or below the mid band-gap energy plays a major role in the generation of photocurrent in these highly stepped NB devices. © The Royal Society of Chemistry 2012.
Source Title: Journal of Materials Chemistry
URI: http://scholarbank.nus.edu.sg/handle/10635/98023
ISSN: 09599428
DOI: 10.1039/c2jm35006h
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