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|Title:||Solid phase epitaxy of ultra-shallow Sn implanted Si observed using high-resolution Rutherford backscattering spectrometry|
|Authors:||Chan, T.K. |
|Citation:||Chan, T.K., Fang, F., Markwitz, A., Osipowicz, T. (2012-08-20). Solid phase epitaxy of ultra-shallow Sn implanted Si observed using high-resolution Rutherford backscattering spectrometry. Applied Physics Letters 101 (8) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4747487|
|Abstract:||We present detailed observations of the solid phase epitaxy process in Sn-implanted Si samples with nanometric depth resolution within a 50 nm ultra-shallow region beneath the surface. Measurements were made using high-resolution Rutherford backscattering spectrometry coupled with the ion channeling technique. Samples with Sn ions implanted onto Si substrates with and without prior Si + self-amorphization implantation process show different crystal regrowth characteristics during annealing. Regrowth proceeds at a non-uniform rate up to a certain depth before stopping, and an Arrhenius-type defect density limiting model of crystal regrowth is proposed to account for this effect. © 2012 American Institute of Physics.|
|Source Title:||Applied Physics Letters|
|Appears in Collections:||Staff Publications|
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