Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.4747487
Title: Solid phase epitaxy of ultra-shallow Sn implanted Si observed using high-resolution Rutherford backscattering spectrometry
Authors: Chan, T.K. 
Fang, F.
Markwitz, A.
Osipowicz, T. 
Issue Date: 20-Aug-2012
Source: Chan, T.K., Fang, F., Markwitz, A., Osipowicz, T. (2012-08-20). Solid phase epitaxy of ultra-shallow Sn implanted Si observed using high-resolution Rutherford backscattering spectrometry. Applied Physics Letters 101 (8) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4747487
Abstract: We present detailed observations of the solid phase epitaxy process in Sn-implanted Si samples with nanometric depth resolution within a 50 nm ultra-shallow region beneath the surface. Measurements were made using high-resolution Rutherford backscattering spectrometry coupled with the ion channeling technique. Samples with Sn ions implanted onto Si substrates with and without prior Si + self-amorphization implantation process show different crystal regrowth characteristics during annealing. Regrowth proceeds at a non-uniform rate up to a certain depth before stopping, and an Arrhenius-type defect density limiting model of crystal regrowth is proposed to account for this effect. © 2012 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/97961
ISSN: 00036951
DOI: 10.1063/1.4747487
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