Please use this identifier to cite or link to this item:
|Title:||Solid phase epitaxy of ultra-shallow Sn implanted Si observed using high-resolution Rutherford backscattering spectrometry|
|Authors:||Chan, T.K. |
|Source:||Chan, T.K., Fang, F., Markwitz, A., Osipowicz, T. (2012-08-20). Solid phase epitaxy of ultra-shallow Sn implanted Si observed using high-resolution Rutherford backscattering spectrometry. Applied Physics Letters 101 (8) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4747487|
|Abstract:||We present detailed observations of the solid phase epitaxy process in Sn-implanted Si samples with nanometric depth resolution within a 50 nm ultra-shallow region beneath the surface. Measurements were made using high-resolution Rutherford backscattering spectrometry coupled with the ion channeling technique. Samples with Sn ions implanted onto Si substrates with and without prior Si + self-amorphization implantation process show different crystal regrowth characteristics during annealing. Regrowth proceeds at a non-uniform rate up to a certain depth before stopping, and an Arrhenius-type defect density limiting model of crystal regrowth is proposed to account for this effect. © 2012 American Institute of Physics.|
|Source Title:||Applied Physics Letters|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Feb 21, 2018
WEB OF SCIENCETM
checked on Jan 16, 2018
checked on Feb 18, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.