Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3204005
Title: Size dependent thermoelectric properties of silicon nanowires
Authors: Shi, L.
Yao, D.
Zhang, G.
Li, B. 
Issue Date: 2009
Citation: Shi, L., Yao, D., Zhang, G., Li, B. (2009). Size dependent thermoelectric properties of silicon nanowires. Applied Physics Letters 95 (6) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3204005
Abstract: By using first-principles tight-binding electronic structure calculation and Boltzmann transport equation, we investigate the size dependence of thermoelectric properties of silicon nanowires (SiNWs). With cross section area increasing, the electrical conductivity increases slowly, while the Seebeck coefficient reduces remarkably. This leads to a quick reduction of cooling power factor with diameter. Moreover, the figure of merit also decreases with transverse size. Our results demonstrate that in thermoelectric application, NW with small diameter is preferred. We also predict that isotopic doping can increase the value of ZT significantly. With 50% .29Si doping ( 28Si0.5 29Si0.5 NW), the ZT can be increased by 31%. © 2009 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/97944
ISSN: 00036951
DOI: 10.1063/1.3204005
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