Please use this identifier to cite or link to this item:
|Title:||Size dependent thermoelectric properties of silicon nanowires|
|Citation:||Shi, L., Yao, D., Zhang, G., Li, B. (2009). Size dependent thermoelectric properties of silicon nanowires. Applied Physics Letters 95 (6) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3204005|
|Abstract:||By using first-principles tight-binding electronic structure calculation and Boltzmann transport equation, we investigate the size dependence of thermoelectric properties of silicon nanowires (SiNWs). With cross section area increasing, the electrical conductivity increases slowly, while the Seebeck coefficient reduces remarkably. This leads to a quick reduction of cooling power factor with diameter. Moreover, the figure of merit also decreases with transverse size. Our results demonstrate that in thermoelectric application, NW with small diameter is preferred. We also predict that isotopic doping can increase the value of ZT significantly. With 50% .29Si doping ( 28Si0.5 29Si0.5 NW), the ZT can be increased by 31%. © 2009 American Institute of Physics.|
|Source Title:||Applied Physics Letters|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Jan 21, 2019
WEB OF SCIENCETM
checked on Jan 14, 2019
checked on Dec 28, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.