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|Title:||Silicon nanostructures fabricated by Au and SiH4 co-deposition technique using hot-wire chemical vapor deposition|
|Keywords:||High-resolution transmission electron microscopy|
Hot-wire chemical vapor deposition
|Citation:||Chong, S.K., Goh, B.T., Aspanut, Z., Muhamad, M.R., Varghese, B., Sow, C.H., Dee, C.F., Rahman, S.A. (2011-10-31). Silicon nanostructures fabricated by Au and SiH4 co-deposition technique using hot-wire chemical vapor deposition. Thin Solid Films 520 (1) : 74-78. ScholarBank@NUS Repository. https://doi.org/10.1016/j.tsf.2011.06.042|
|Abstract:||In this study, the fabrication of Si nanostructures by Au and SiH 4 co-deposition technique using hot-wire chemical vapor deposition was demonstrated. A high deposition rate of 2.7 nm/s and a high density of silicon nanostructures with a diameter of about 140 nm were obtained at T s of 250 °C. An increase in Ts led to a significant reduction in the size of the nanostructures. However, coalescence on the nanostructures was observed at Ts of 400 °C. The Si nanostructures exhibited a highly crystalline structure, which was induced by Au crystallites. The crystallite size and crystallinity of the Si nanostructures amplified with the increase in Ts. The presence of nanostructures enhanced the surface roughness of the samples and clearly reduced the reflection, especially in the visible region. © 2011 Elsevier B.V.|
|Source Title:||Thin Solid Films|
|Appears in Collections:||Staff Publications|
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