Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3687190
Title: Silicon layer intercalation of centimeter-scale, epitaxially grown monolayer graphene on Ru(0001)
Authors: Mao, J.
Huang, L.
Pan, Y.
Gao, M.
He, J.
Zhou, H.
Guo, H.
Tian, Y.
Zou, Q.
Zhang, L.
Zhang, H.
Wang, Y.
Du, S.
Zhou, X.
Castro Neto, A.H. 
Gao, H.-J.
Issue Date: 27-Feb-2012
Source: Mao, J., Huang, L., Pan, Y., Gao, M., He, J., Zhou, H., Guo, H., Tian, Y., Zou, Q., Zhang, L., Zhang, H., Wang, Y., Du, S., Zhou, X., Castro Neto, A.H., Gao, H.-J. (2012-02-27). Silicon layer intercalation of centimeter-scale, epitaxially grown monolayer graphene on Ru(0001). Applied Physics Letters 100 (9) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3687190
Abstract: We develop a strategy for graphene growth on Ru(0001) followed by silicon-layer intercalation that not only weakens the interaction of graphene with the metal substrate but also retains its superlative properties. This G/Si/Ru architecture, produced by silicon-layer intercalation approach (SIA), was characterized by scanning tunneling microscopy/spectroscopy and angle resolved electron photoemission spectroscopy. These experiments show high structural and electronic qualities of this new composite. The SIA allows for an atomic control of the distance between the graphene and the metal substrate that can be used as a top gate. Our results show potential for the next generation of graphene-based materials with tailored properties. © 2012 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/97919
ISSN: 00036951
DOI: 10.1063/1.3687190
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