Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.materresbull.2013.04.037
Title: Shape transition of endotaxial islands growth from kinetically constrained to equilibrium regimes
Authors: Li, Z.-P.
Tok, E. 
Foo, Y.
Keywords: Electron microscopy
Epitaxial growth
Interfaces
Microstructure
Nanostructure
Issue Date: Sep-2013
Citation: Li, Z.-P., Tok, E., Foo, Y. (2013-09). Shape transition of endotaxial islands growth from kinetically constrained to equilibrium regimes. Materials Research Bulletin 48 (9) : 2998-3008. ScholarBank@NUS Repository. https://doi.org/10.1016/j.materresbull.2013.04.037
Abstract: A comprehensive study of Fe grown on Ge(0 0 1) substrates has been conducted at elevated temperatures, ranging from 350 to 675 C. All iron germinide islands, with the same Fe13Ge8 phase, grow into the Ge substrate with the same epitaxial relationship. Shape transition occurs from small square islands (low temperatures), to elongated orthogonal islands or orthogonal nanowires (intermediate temperatures), and then finally to large square orthogonal islands (high temperatures). According to both transmission electron microscopy (TEM) and atomic force microscopy (AFM) investigations, all islands can be defined as either type-I or type-II. Type-I islands usually form at kinetically constrained growth regimes, like truncated pyramids. Type-II islands usually appear at equilibrium growth regimes forming a dome-like shape. Based on a simple semi-quantitative model, type-II islands have a lower total energy per volume than type-I, which is considered as the dominant mechanism for this type of shape transition. Moreover, this study not only elucidates details of endotaxial growth in the Fe-Ge system, but also suggests the possibility of controlled fabrication of temperature-dependent nanostructures, especially in materials with dissimilar crystal structures. © 2013 Elsevier Ltd. All rights reserved.
Source Title: Materials Research Bulletin
URI: http://scholarbank.nus.edu.sg/handle/10635/97911
ISSN: 00255408
DOI: 10.1016/j.materresbull.2013.04.037
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