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|Title:||Secondary ion emission from silicon under 8 keV O2 + and Ar+ ion bombardment|
|Authors:||Huan, C.H.A. |
|Citation:||Huan, C.H.A., Wee, A.T.S., Low, H.S.M., Tan, K.L. (1996-02). Secondary ion emission from silicon under 8 keV O2 + and Ar+ ion bombardment. Vacuum 47 (2) : 119-127. ScholarBank@NUS Repository. https://doi.org/10.1016/0042-207X(95)00207-3|
|Abstract:||The energy distributions of the secondary ion yields from silicon under 8 keV O2 + or Ar+ ion bombardment show two distinct peaks when the surface is heavily oxidised. For positive ions, a low energy peak (at between 6 and 8 eV) appears with the formation of SiO2 on the surface. When this peak is dominant in the energy distribution, the exponent N of the high energy tail E-N shows a linear relation with the m/z of the secondary ion. The physically sputtered species (SiO+, Si2O+, etc.) are located on the main trunk while the chemically sputtered species (SiO+, Si2O+, etc.) form branches. In cases where the high energy peak is dominant, no relationship between N and m/z can be observed. The observed peaks are deduced to originate from separate ionisation mechanisms which depend upon surface conditions. Results from the negative secondary ions show that the first-order effect and the surface polarisation model are possible mechanisms of negative ion enhancement. The question of cluster emission is also discussed in relation to the behaviour of N vs m/z.|
|Appears in Collections:||Staff Publications|
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