Please use this identifier to cite or link to this item:
|Title:||Secondary ion emission from silicon under 8 keV O2 + and Ar+ ion bombardment|
|Authors:||Huan, C.H.A. |
|Citation:||Huan, C.H.A., Wee, A.T.S., Low, H.S.M., Tan, K.L. (1996-02). Secondary ion emission from silicon under 8 keV O2 + and Ar+ ion bombardment. Vacuum 47 (2) : 119-127. ScholarBank@NUS Repository. https://doi.org/10.1016/0042-207X(95)00207-3|
|Abstract:||The energy distributions of the secondary ion yields from silicon under 8 keV O2 + or Ar+ ion bombardment show two distinct peaks when the surface is heavily oxidised. For positive ions, a low energy peak (at between 6 and 8 eV) appears with the formation of SiO2 on the surface. When this peak is dominant in the energy distribution, the exponent N of the high energy tail E-N shows a linear relation with the m/z of the secondary ion. The physically sputtered species (SiO+, Si2O+, etc.) are located on the main trunk while the chemically sputtered species (SiO+, Si2O+, etc.) form branches. In cases where the high energy peak is dominant, no relationship between N and m/z can be observed. The observed peaks are deduced to originate from separate ionisation mechanisms which depend upon surface conditions. Results from the negative secondary ions show that the first-order effect and the surface polarisation model are possible mechanisms of negative ion enhancement. The question of cluster emission is also discussed in relation to the behaviour of N vs m/z.|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Oct 18, 2018
WEB OF SCIENCETM
checked on Oct 2, 2018
checked on Oct 5, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.