Please use this identifier to cite or link to this item: https://doi.org/10.1021/nl400872q
Title: Resonant tunneling in graphene pseudomagnetic quantum dots
Authors: Qi, Z.
Bahamon, D.A.
Pereira, V.M. 
Park, H.S.
Campbell, D.K.
Neto, A.H.C.
Keywords: atomistic calculations
Graphene
magnetic quantum dots
pseudomagnetic fields
quantum transport
strain
Issue Date: 12-Jun-2013
Source: Qi, Z., Bahamon, D.A., Pereira, V.M., Park, H.S., Campbell, D.K., Neto, A.H.C. (2013-06-12). Resonant tunneling in graphene pseudomagnetic quantum dots. Nano Letters 13 (6) : 2692-2697. ScholarBank@NUS Repository. https://doi.org/10.1021/nl400872q
Abstract: Realistic relaxed configurations of triaxially strained graphene quantum dots are obtained from unbiased atomistic mechanical simulations. The local electronic structure and quantum transport characteristics of y-junctions based on such dots are studied, revealing that the quasi-uniform pseudomagnetic field induced by strain restricts transport to Landau level- and edge state-assisted resonant tunneling. Valley degeneracy is broken in the presence of an external field, allowing the selective filtering of the valley and chirality of the states assisting in the resonant tunneling. Asymmetric strain conditions can be explored to select the exit channel of the y-junction. © 2013 American Chemical Society.
Source Title: Nano Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/97817
ISSN: 15306984
DOI: 10.1021/nl400872q
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