Please use this identifier to cite or link to this item:
https://doi.org/10.1021/nl101836z
DC Field | Value | |
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dc.title | Remarkable reduction of thermal conductivity in silicon nanotubes | |
dc.contributor.author | Chen, J. | |
dc.contributor.author | Zhang, G. | |
dc.contributor.author | Li, B. | |
dc.date.accessioned | 2014-10-16T09:39:28Z | |
dc.date.available | 2014-10-16T09:39:28Z | |
dc.date.issued | 2010-10-13 | |
dc.identifier.citation | Chen, J., Zhang, G., Li, B. (2010-10-13). Remarkable reduction of thermal conductivity in silicon nanotubes. Nano Letters 10 (10) : 3978-3983. ScholarBank@NUS Repository. https://doi.org/10.1021/nl101836z | |
dc.identifier.issn | 15306984 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/97800 | |
dc.description.abstract | We propose to reduce the thermal conductivity of silicon nanowires (SiNWs) by introducing a small hole at the center, i.e., construct a silicon nanotube (SiNT) structure. Our numerical results demonstrate that a very small hole (only 1% reduction in cross section area) can induce a 35% reduction in room temperature thermal conductivity. Moreover, with the same cross section area, thermal conductivity of SiNT is only about 33% of that of SiNW at room temperature. The spatial distribution of vibrational energy reveals that localization modes are concentrated on the inner and outer surfaces of SiNTs. The enhanced surface-to-volume ratio in SiNTs reduces the percentage of delocalized modes, which is believed to be responsible for the reduction of thermal conductivity. Our study suggests SiNT is a promising thermoelectric material with low thermal conductivity. © 2010 American Chemical Society. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1021/nl101836z | |
dc.source | Scopus | |
dc.subject | Nanotube | |
dc.subject | Nanowire | |
dc.subject | Surface localization | |
dc.subject | Thermal conductivity | |
dc.subject | Thermoelectric material | |
dc.type | Article | |
dc.contributor.department | PHYSICS | |
dc.description.doi | 10.1021/nl101836z | |
dc.description.sourcetitle | Nano Letters | |
dc.description.volume | 10 | |
dc.description.issue | 10 | |
dc.description.page | 3978-3983 | |
dc.description.coden | NALEF | |
dc.identifier.isiut | 000282727600030 | |
Appears in Collections: | Staff Publications |
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