Please use this identifier to cite or link to this item: https://doi.org/10.1021/nl101836z
Title: Remarkable reduction of thermal conductivity in silicon nanotubes
Authors: Chen, J.
Zhang, G.
Li, B. 
Keywords: Nanotube
Nanowire
Surface localization
Thermal conductivity
Thermoelectric material
Issue Date: 13-Oct-2010
Citation: Chen, J., Zhang, G., Li, B. (2010-10-13). Remarkable reduction of thermal conductivity in silicon nanotubes. Nano Letters 10 (10) : 3978-3983. ScholarBank@NUS Repository. https://doi.org/10.1021/nl101836z
Abstract: We propose to reduce the thermal conductivity of silicon nanowires (SiNWs) by introducing a small hole at the center, i.e., construct a silicon nanotube (SiNT) structure. Our numerical results demonstrate that a very small hole (only 1% reduction in cross section area) can induce a 35% reduction in room temperature thermal conductivity. Moreover, with the same cross section area, thermal conductivity of SiNT is only about 33% of that of SiNW at room temperature. The spatial distribution of vibrational energy reveals that localization modes are concentrated on the inner and outer surfaces of SiNTs. The enhanced surface-to-volume ratio in SiNTs reduces the percentage of delocalized modes, which is believed to be responsible for the reduction of thermal conductivity. Our study suggests SiNT is a promising thermoelectric material with low thermal conductivity. © 2010 American Chemical Society.
Source Title: Nano Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/97800
ISSN: 15306984
DOI: 10.1021/nl101836z
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