Please use this identifier to cite or link to this item: https://doi.org/10.1088/0268-1242/18/2/316
Title: Rapid thermal annealing effect on crystalline yttria-stabilized zirconia gate dielectrics
Authors: Wang, S.J.
Ong, C.K. 
Issue Date: Feb-2003
Source: Wang, S.J., Ong, C.K. (2003-02). Rapid thermal annealing effect on crystalline yttria-stabilized zirconia gate dielectrics. Semiconductor Science and Technology 18 (2) : 154-157. ScholarBank@NUS Repository. https://doi.org/10.1088/0268-1242/18/2/316
Abstract: Crystalline yttria-stabilized zirconia (YSZ) gate dielectrics have been successfully fabricated on silicon wafers. By carefully controlling the annealing condition, the crystalline YSZ gate dielectrics show promising performances following the rapid thermal annealing process. The equivalent electrical oxide thickness only increases about 2.0 Å after annealing in O2 gas, while the leakage current decreases by more than two orders of magnitude compared with that of as-deposited samples. The results indicate that zirconia is potentially an alternative gate dielectrics for application in present silicon-based technology.
Source Title: Semiconductor Science and Technology
URI: http://scholarbank.nus.edu.sg/handle/10635/97756
ISSN: 02681242
DOI: 10.1088/0268-1242/18/2/316
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