Please use this identifier to cite or link to this item: https://doi.org/10.1021/nn203472f
Title: Raman characterization of ABA- and ABC-stacked trilayer graphene
Authors: Cong, C.
Yu, T. 
Sato, K.
Shang, J.
Saito, R.
Dresselhaus, G.F.
Dresselhaus, M.S.
Keywords: double resonance Raman spectroscopy
electron-phonon interaction
graphene
Raman scattering
stacking order
Issue Date: 22-Nov-2011
Citation: Cong, C., Yu, T., Sato, K., Shang, J., Saito, R., Dresselhaus, G.F., Dresselhaus, M.S. (2011-11-22). Raman characterization of ABA- and ABC-stacked trilayer graphene. ACS Nano 5 (11) : 8760-8768. ScholarBank@NUS Repository. https://doi.org/10.1021/nn203472f
Abstract: Bernal (ABA stacking order) and rhombohedral (ABC) trilayer graphene (3LG) are characterized by Raman spectroscopy. From a systematic experimental and theoretical analysis of the Raman modes in both of these 3LGs, we show that the G band, G' (2D) band, and the intermediate-frequency combination modes of 3LGs are sensitive to the stacking order of 3LG. The phonon wavevector q, that gives the double resonance Raman spectra is larger in ABC than ABA, which is the reason why we get the different Raman frequencies and their spectral widths for ABA and ABC 3LG. The weak electron-phonon interaction in ABC-stacked 3LG and the localized strain at the boundary between ABC- and ABA-stacked domains are clearly reflected by the softening of the G mode and the G' mode, respectively. © 2011 American Chemical Society.
Source Title: ACS Nano
URI: http://scholarbank.nus.edu.sg/handle/10635/97731
ISSN: 19360851
DOI: 10.1021/nn203472f
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