Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2010606
Title: Pseudo-epitaxial lead zirconate titanate thin film on silicon substrate with enhanced ferroelectric polarization
Authors: Goh, W.C. 
Yao, K.
Ong, C.K. 
Issue Date: 15-Aug-2005
Citation: Goh, W.C., Yao, K., Ong, C.K. (2005-08-15). Pseudo-epitaxial lead zirconate titanate thin film on silicon substrate with enhanced ferroelectric polarization. Applied Physics Letters 87 (7) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2010606
Abstract: A pseudo-epitaxial Pb (Zr0.52 Ti0.48) O3 (PZT) thin film was fabricated on a silicon substrate using a La0.7 Sr0.3 MnO3 YBa2 Cu3 O7-δ yttria-stabilized zirconia heterostructure template by a pulsed-laser deposition process. The pseudo-epitaxial PZT thin film was characterized with broad x-ray diffraction peaks and granular morphology with nanometer-sized pores distributed across the film. Despite the imperfect epitaxial quality, the pseudo-epitaxial PZT thin film exhibited a substantially larger ferroelectric polarization than those "ideal" epitaxial films deposited on silicon substrates. The possible mechanisms underlying this phenomenon were analyzed, and the results indicated that only improving the epitaxial quality without considering the tensile stress relief is not sufficient in achieving the optimal ferroelectric polarization for a ferroelectric film on silicon substrate. © 2005 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/97646
ISSN: 00036951
DOI: 10.1063/1.2010606
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