Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.4794901
Title: Post-fabrication, in situ laser reduction of graphene oxide devices
Authors: Petridis, C.
Lin, Y.-H.
Savva, K.
Eda, G. 
Kymakis, E.
Anthopoulos, T.D.
Stratakis, E.
Issue Date: 4-Mar-2013
Citation: Petridis, C., Lin, Y.-H., Savva, K., Eda, G., Kymakis, E., Anthopoulos, T.D., Stratakis, E. (2013-03-04). Post-fabrication, in situ laser reduction of graphene oxide devices. Applied Physics Letters 102 (9) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4794901
Abstract: We report on post-fabrication, in situ, laser induced reduction of graphene oxide (GO) field effect transistors. Our one-step method is efficient, fast, and elevates the conductivity of GO transistor channels by two orders of magnitude. Compared to other reduction techniques, it is facile and simple since it does not require any stringent experimental conditions. Most importantly, we show here that it can be applied for, in situ, post-fabrication reduction of GO devices without compromising any of its components. The physical properties of the laser-reduced graphene oxide were assessed by micro-Raman and X-ray photoelectron spectroscopy analysis and the electrical properties by electric field effect measurements. The application of this technique in other graphene-based optoelectronic devices, especially those fabricated on inexpensive and temperature sensitive flexible substrates such as plastic, is envisaged. © 2013 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/97575
ISSN: 00036951
DOI: 10.1063/1.4794901
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