Please use this identifier to cite or link to this item: https://doi.org/10.1002/(SICI)1096-9918(199908)28:1<245::AID-SIA586>3.0.CO;2-I
DC FieldValue
dc.titlePost-annealing effect in reactive r.f.-magnetron-sputtered carbon nitride thin films
dc.contributor.authorChen, G.L.
dc.contributor.authorLi, Y.
dc.contributor.authorLin, J.
dc.contributor.authorHuan, C.H.A.
dc.contributor.authorGuo, Y.P.
dc.date.accessioned2014-10-16T09:36:51Z
dc.date.available2014-10-16T09:36:51Z
dc.date.issued1999
dc.identifier.citationChen, G.L., Li, Y., Lin, J., Huan, C.H.A., Guo, Y.P. (1999). Post-annealing effect in reactive r.f.-magnetron-sputtered carbon nitride thin films. Surface and Interface Analysis 28 (1) : 245-249. ScholarBank@NUS Repository. https://doi.org/10.1002/(SICI)1096-9918(199908)28:1<245::AID-SIA586>3.0.CO;2-I
dc.identifier.issn01422421
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/97574
dc.description.abstractThin films of CNx were deposited by reactive r.f.-magnetron sputtering on Si(100) substrates. The effect of annealing temperatures on the structural properties of the films has been studied by Fourier transform infrared (FTIR) spectroscopy, x-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM). Both FTIR and XPS results show that the population of the carbon nitrogen phase decreases upon annealing in a vacuum. The XPS N 1s peaks indicate the component due to the carbon nitrogen bond to be significantly weaker than the others. An increase of the annealing temperature leads to a more prominent peak corresponding to the C-N phase in the FTIR absorption spectra. These results suggest a substantial decrease of the weakly bound nitrogen and carbon dangling bonds. Electron diffraction measurements reveal the existence of polycrystalline C3N4 structures in films annealed at 700 °C in a vacuum. The XPS studies confirmed that these crystalline phases are composed exclusively of carbon and nitrogen.
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentMATERIALS SCIENCE
dc.contributor.departmentPHYSICS
dc.description.doi10.1002/(SICI)1096-9918(199908)28:1<245::AID-SIA586>3.0.CO;2-I
dc.description.sourcetitleSurface and Interface Analysis
dc.description.volume28
dc.description.issue1
dc.description.page245-249
dc.description.codenSIAND
dc.identifier.isiutNOT_IN_WOS
dc.published.stateUnpublished
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