Please use this identifier to cite or link to this item:
|Title:||Post-annealing effect in reactive r.f.-magnetron-sputtered carbon nitride thin films|
|Source:||Chen, G.L.,Li, Y.,Lin, J.,Huan, C.H.A.,Guo, Y.P. (1999). Post-annealing effect in reactive r.f.-magnetron-sputtered carbon nitride thin films. Surface and Interface Analysis 28 (1) : 245-249. ScholarBank@NUS Repository. https://doi.org/10.1002/(SICI)1096-9918(199908)28:13.0.CO;2-I|
|Abstract:||Thin films of CNx were deposited by reactive r.f.-magnetron sputtering on Si(100) substrates. The effect of annealing temperatures on the structural properties of the films has been studied by Fourier transform infrared (FTIR) spectroscopy, x-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM). Both FTIR and XPS results show that the population of the carbon nitrogen phase decreases upon annealing in a vacuum. The XPS N 1s peaks indicate the component due to the carbon nitrogen bond to be significantly weaker than the others. An increase of the annealing temperature leads to a more prominent peak corresponding to the C-N phase in the FTIR absorption spectra. These results suggest a substantial decrease of the weakly bound nitrogen and carbon dangling bonds. Electron diffraction measurements reveal the existence of polycrystalline C3N4 structures in films annealed at 700 °C in a vacuum. The XPS studies confirmed that these crystalline phases are composed exclusively of carbon and nitrogen.|
|Source Title:||Surface and Interface Analysis|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Feb 23, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.