Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/97555
Title: Plasma enhanced chemical vapor deposition and characterization of hydrogenated amorphous SiC films on Si
Authors: Wang, Y.
Lin, J. 
Feng, Z.C.
Chua, S.J.
Alfred, C.H.H. 
Issue Date: 2000
Source: Wang, Y.,Lin, J.,Feng, Z.C.,Chua, S.J.,Alfred, C.H.H. (2000). Plasma enhanced chemical vapor deposition and characterization of hydrogenated amorphous SiC films on Si. Materials Science Forum 338 : I/-. ScholarBank@NUS Repository.
Abstract: In this study, hydrogenated amorphous silicon carbon (a-Si1-xCx: H) thin films were synthesized on Si substrates by plasma enhanced chemical vapor deposition (PECVD) technique. The source gases used were C2H4, SiH4, and H2 (for dilution). The compositional parameter x is found to be closely relevant to practical vibrational and optical properties of this material. XPS and FTIR spectra strongly support the existence of C-Si covalent bonds in the grown thin films. Raman spectra do not show a strong Si-C Raman peak. The Photoluminescence result is quite different from the previous reports.
Source Title: Materials Science Forum
URI: http://scholarbank.nus.edu.sg/handle/10635/97555
ISSN: 02555476
Appears in Collections:Staff Publications

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