Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1839287
Title: Photoemission study of energy-band alignment for RuOx/HfO 2/Si system
Authors: Li, Q.
Wang, S.J.
Li, K.B.
Huan, A.C.H. 
Chai, J.W.
Pan, J.S.
Ong, C.K. 
Issue Date: 20-Dec-2004
Citation: Li, Q., Wang, S.J., Li, K.B., Huan, A.C.H., Chai, J.W., Pan, J.S., Ong, C.K. (2004-12-20). Photoemission study of energy-band alignment for RuOx/HfO 2/Si system. Applied Physics Letters 85 (25) : 6155-6157. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1839287
Abstract: Conductive oxides RuOx as alternative electrode on high- κ HfO2 gate dielectric have been fabricated by ultrahigh-vacuum sputtering and subsequently oxidized using oxygen plasma. The energy-band alignment for the RuOx HfO2 Si system and the oxidation-state dependence of barrier height for RuOx contacting to HfO2 dielectrics has been analyzed by x-ray photoemission spectroscopy. The valence- and conduction-band offsets of HfO2 Si are determined to be 3.05±0.1 and 1.48±0.1 eV, respectively. The barrier heights for the RuOx contacting to HfO2 are oxidation-state dependent, in the range of 1.95-2.73 eV. © 2004 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/97535
ISSN: 00036951
DOI: 10.1063/1.1839287
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