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|Title:||Photoemission study of energy-band alignment for RuOx/HfO 2/Si system|
|Citation:||Li, Q., Wang, S.J., Li, K.B., Huan, A.C.H., Chai, J.W., Pan, J.S., Ong, C.K. (2004-12-20). Photoemission study of energy-band alignment for RuOx/HfO 2/Si system. Applied Physics Letters 85 (25) : 6155-6157. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1839287|
|Abstract:||Conductive oxides RuOx as alternative electrode on high- κ HfO2 gate dielectric have been fabricated by ultrahigh-vacuum sputtering and subsequently oxidized using oxygen plasma. The energy-band alignment for the RuOx HfO2 Si system and the oxidation-state dependence of barrier height for RuOx contacting to HfO2 dielectrics has been analyzed by x-ray photoemission spectroscopy. The valence- and conduction-band offsets of HfO2 Si are determined to be 3.05±0.1 and 1.48±0.1 eV, respectively. The barrier heights for the RuOx contacting to HfO2 are oxidation-state dependent, in the range of 1.95-2.73 eV. © 2004 American Institute of Physics.|
|Source Title:||Applied Physics Letters|
|Appears in Collections:||Staff Publications|
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