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|Title:||Organic double-gate field-effect transistors: Logic-AND operation|
|Authors:||Chua, L.-L. |
|Citation:||Chua, L.-L., Friend, R.H., Ho, P.K.H. (2005). Organic double-gate field-effect transistors: Logic-AND operation. Applied Physics Letters 87 (25) : 1-3. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2149351|
|Abstract:||A unipolar double-gate field-effect transistor (DG-FET) with AND logic functionality is demonstrated. This operation regime arises through a symmetric electrostatic coupling of two conduction channels via the intrinsic semiconductor layer. According to simulation, this mode of operation is general and not limited to organic devices. These DG-FETs provide for two-signal modulation in a single device of a shared active region, and are thus versatile building blocks for logic, memories, sensing, data transmission and light-emitting FETs. When the two gates are tied together somewhat reminiscent of Si FinFETs, these devices can achieve considerably deeper gate modulation than possible with single gating. © 2005 American Institute of Physics.|
|Source Title:||Applied Physics Letters|
|Appears in Collections:||Staff Publications|
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