Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2149351
Title: Organic double-gate field-effect transistors: Logic-AND operation
Authors: Chua, L.-L. 
Friend, R.H.
Ho, P.K.H. 
Issue Date: 2005
Source: Chua, L.-L., Friend, R.H., Ho, P.K.H. (2005). Organic double-gate field-effect transistors: Logic-AND operation. Applied Physics Letters 87 (25) : 1-3. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2149351
Abstract: A unipolar double-gate field-effect transistor (DG-FET) with AND logic functionality is demonstrated. This operation regime arises through a symmetric electrostatic coupling of two conduction channels via the intrinsic semiconductor layer. According to simulation, this mode of operation is general and not limited to organic devices. These DG-FETs provide for two-signal modulation in a single device of a shared active region, and are thus versatile building blocks for logic, memories, sensing, data transmission and light-emitting FETs. When the two gates are tied together somewhat reminiscent of Si FinFETs, these devices can achieve considerably deeper gate modulation than possible with single gating. © 2005 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/97469
ISSN: 00036951
DOI: 10.1063/1.2149351
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