Please use this identifier to cite or link to this item: https://doi.org/10.1149/2.015202jss
Title: On the formation of 50 nm diameter free-standing silicon wires produced by ion irradiation
Authors: Song, J.
Dang, Z.Y.
Azimi, S.
Breese, M.B.H. 
Forneris, J.
Vittone, E.
Issue Date: 2012
Citation: Song, J., Dang, Z.Y., Azimi, S., Breese, M.B.H., Forneris, J., Vittone, E. (2012). On the formation of 50 nm diameter free-standing silicon wires produced by ion irradiation. ECS Journal of Solid State Science and Technology 1 (2) : P66-P69. ScholarBank@NUS Repository. https://doi.org/10.1149/2.015202jss
Abstract: Ion irradiation in conjunction with electrochemical etching is a promising silicon (Si) machining technique for three-dimensional nanofabrication. We present a study of factors influencing the formation of silicon nanowires fabricated by this technique, such as ion energy, fluence, proximity of adjacent wires, location within an irradiated area and wafer resistivity. A better understanding of these factors in different resistivity wafers has enabled us to produce wire diameters and gaps between adjacent wires of about 50 nm using 50 keV protons.Multilayer silicon nanowire arrays are also achieved, so extending the use of this process for three dimensional nanoscale silicon machining. © 2012 The Electrochemical Society. All rights reserved.
Source Title: ECS Journal of Solid State Science and Technology
URI: http://scholarbank.nus.edu.sg/handle/10635/97424
ISSN: 21628769
DOI: 10.1149/2.015202jss
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