Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2008.923540
Title: Novel silicon-carbon (Si:C) Schottky barrier enhancement layer for dark-current suppression in Ge-on-SOI MSM photodetectors
Authors: Ang, K.-W.
Zhu, S.-Y.
Wang, J. 
Chua, K.-T.
Yu, M.-B.
Lo, G.-Q.
Kwong, D.-L.
Keywords: Germanium-on-silicon-on-insulator (Ge-on-SOI)
Metal-semiconductor-metal (MSM) photodetector
Schottky barrier
Silicon-carbon (Si:C)
Issue Date: Jul-2008
Source: Ang, K.-W., Zhu, S.-Y., Wang, J., Chua, K.-T., Yu, M.-B., Lo, G.-Q., Kwong, D.-L. (2008-07). Novel silicon-carbon (Si:C) Schottky barrier enhancement layer for dark-current suppression in Ge-on-SOI MSM photodetectors. IEEE Electron Device Letters 29 (7) : 704-707. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2008.923540
Abstract: This letter reports the first demonstration of an evanescent coupled germanium-on-silicon-on-insulator (Ge-on-SOI) metalsemiconductormetal (MSM) photodetector with a novel siliconcarbon (Si:C) Schottky barrier enhancement layer. Through the insertion of a Si:C barrier layer between the metal/Ge interface, the hole Schottky barrier height φbh can effectively be enhanced to ∼0.52 eV above the valence band edge. As a result, significant dark-current IDark suppression by more than four orders of magnitude was demonstrated, leading to an impressive IDark of ∼ 11.5 nA for an applied bias VA of 1.0 V. Optical measurements performed at a photon wavelength of 1550 nm revealed the achievement of good internal responsivity and quantum efficiency of ∼530 mA/W and 42.4%, respectively, making such a high-performance Ge-on-SOI MSM photodetector a promising option for optical communication applications. © 2008 IEEE.
Source Title: IEEE Electron Device Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/97369
ISSN: 07413106
DOI: 10.1109/LED.2008.923540
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