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https://doi.org/10.1021/am402550s
DC Field | Value | |
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dc.title | NIR schottky photodetectors based on individual single-crystalline GeSe nanosheet | |
dc.contributor.author | Mukherjee, B. | |
dc.contributor.author | Cai, Y. | |
dc.contributor.author | Tan, H.R. | |
dc.contributor.author | Feng, Y.P. | |
dc.contributor.author | Tok, E.S. | |
dc.contributor.author | Sow, C.H. | |
dc.date.accessioned | 2014-10-16T09:33:55Z | |
dc.date.available | 2014-10-16T09:33:55Z | |
dc.date.issued | 2013 | |
dc.identifier.citation | Mukherjee, B., Cai, Y., Tan, H.R., Feng, Y.P., Tok, E.S., Sow, C.H. (2013). NIR schottky photodetectors based on individual single-crystalline GeSe nanosheet. ACS Applied Materials and Interfaces 5 (19) : 9594-9604. ScholarBank@NUS Repository. https://doi.org/10.1021/am402550s | |
dc.identifier.issn | 19448244 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/97324 | |
dc.description.abstract | We have synthesized high-quality, micrometer-sized, single-crystal GeSe nanosheets using vapor transport and deposition techniques. Photoresponse is investigated based on mechanically exfoliated GeSe nanosheet combined with Au contacts under a global laser irradiation scheme. The nonlinearship, asymmetric, and unsaturated characteristics of the I-V curves reveal that two uneven back-to-back Schottky contacts are formed. First-principles calculations indicate that the occurrence of defects-induced in-gap defective states, which are responsible for the slow decay of the current in the OFF state and for the weak light intensity dependence of photocurrent. The Schottky photodetector exhibits a marked photoresponse to NIR light illumination (maximum photoconductive gain ∼5.3 × 102 % at 4 V) at a wavelength of 808 nm. The significant photoresponse and good responsitivity (∼3.5 A W-1) suggests its potential applications as photodetectors. © 2013 American Chemical Society. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1021/am402550s | |
dc.source | Scopus | |
dc.subject | germanium monoselenide | |
dc.subject | GeSe | |
dc.subject | layered compound | |
dc.subject | nanosheets | |
dc.subject | photodetector | |
dc.subject | vapor deposition | |
dc.type | Article | |
dc.contributor.department | PHYSICS | |
dc.description.doi | 10.1021/am402550s | |
dc.description.sourcetitle | ACS Applied Materials and Interfaces | |
dc.description.volume | 5 | |
dc.description.issue | 19 | |
dc.description.page | 9594-9604 | |
dc.identifier.isiut | 000326356600047 | |
Appears in Collections: | Staff Publications |
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