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Title: Near-field spectroscopy of silicon dioxide thin films
Authors: Zhang, L.M.
Andreev, G.O.
Fei, Z.
McLeod, A.S.
Dominguez, G.
Thiemens, M.
Castro-Neto, A.H. 
Basov, D.N.
Fogler, M.M.
Issue Date: 21-Feb-2012
Source: Zhang, L.M., Andreev, G.O., Fei, Z., McLeod, A.S., Dominguez, G., Thiemens, M., Castro-Neto, A.H., Basov, D.N., Fogler, M.M. (2012-02-21). Near-field spectroscopy of silicon dioxide thin films. Physical Review B - Condensed Matter and Materials Physics 85 (7) : -. ScholarBank@NUS Repository.
Abstract: We analyze the results of scanning near-field infrared spectroscopy performed on thin films of a-SiO 2 on Si substrate. The measured near-field signal exhibits surface-phonon resonances whose strength has a prominent thickness dependence in the range from 2 to 300nm. These observations are compared with calculations in which the tip of the near-field infrared spectrometer is modeled either as a point dipole or an elongated spheroid. The latter model accounts for the antenna effect of the tip and gives a better agreement with the experiment. Possible applications of the near-field technique for depth profiling of layered nanostructures are discussed. © 2012 American Physical Society.
Source Title: Physical Review B - Condensed Matter and Materials Physics
ISSN: 10980121
DOI: 10.1103/PhysRevB.85.075419
Appears in Collections:Staff Publications

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