Please use this identifier to cite or link to this item: https://doi.org/10.1103/PhysRevB.85.075419
Title: Near-field spectroscopy of silicon dioxide thin films
Authors: Zhang, L.M.
Andreev, G.O.
Fei, Z.
McLeod, A.S.
Dominguez, G.
Thiemens, M.
Castro-Neto, A.H. 
Basov, D.N.
Fogler, M.M.
Issue Date: 21-Feb-2012
Source: Zhang, L.M., Andreev, G.O., Fei, Z., McLeod, A.S., Dominguez, G., Thiemens, M., Castro-Neto, A.H., Basov, D.N., Fogler, M.M. (2012-02-21). Near-field spectroscopy of silicon dioxide thin films. Physical Review B - Condensed Matter and Materials Physics 85 (7) : -. ScholarBank@NUS Repository. https://doi.org/10.1103/PhysRevB.85.075419
Abstract: We analyze the results of scanning near-field infrared spectroscopy performed on thin films of a-SiO 2 on Si substrate. The measured near-field signal exhibits surface-phonon resonances whose strength has a prominent thickness dependence in the range from 2 to 300nm. These observations are compared with calculations in which the tip of the near-field infrared spectrometer is modeled either as a point dipole or an elongated spheroid. The latter model accounts for the antenna effect of the tip and gives a better agreement with the experiment. Possible applications of the near-field technique for depth profiling of layered nanostructures are discussed. © 2012 American Physical Society.
Source Title: Physical Review B - Condensed Matter and Materials Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/97303
ISSN: 10980121
DOI: 10.1103/PhysRevB.85.075419
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

34
checked on Feb 12, 2018

WEB OF SCIENCETM
Citations

36
checked on Dec 13, 2017

Page view(s)

24
checked on Feb 16, 2018

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.