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|Title:||Multiphase structure of hydrogenated amorphous silicon carbide thin films|
|Keywords:||Hydrogenated amorphous silicon carbide|
|Citation:||Wang, Y.H., Lin, J., Huan, C.H.A. (2002-07-01). Multiphase structure of hydrogenated amorphous silicon carbide thin films. Materials Science and Engineering B: Solid-State Materials for Advanced Technology 95 (1) : 43-50. ScholarBank@NUS Repository. https://doi.org/10.1016/S0921-5107(02)00204-0|
|Abstract:||The structural and optical properties of hydrogenated amorphous silicon carbon (a-Si1-xCx:H) thin films, grown from argon diluted silane, ethylene, and hydrogen mixture by plasma-enhanced chemical vapor deposition (PE-CVD) technique, were studied. Variable flow rates and other growth conditions were applied. A variety of techniques, including X-ray photoelectron spectroscopy (XPS), Fourier transform infrared (FTIR) spectroscopy, Raman scattering (RS), atomic force microscopy (AFM), high-resolution transmission electron microscopy (HR-TEM), UV-VIS-NIR spectroscopy, and photoluminescence (PL) were used to characterize the grown materials. The results confirmed the multiphase structure of the grown a-Si1-xCx:H thin films: Si-C network, carbon-like and silicon-like clusters coexisting. The room temperature (RT) PL shows a different result from the previous reports. It is suggested that both graphite-like phase and a-Si:H-like phase are light-emitting grains. The two types of grains and Si-C network are the origin of the PL in hydrogenated amorphous silicon carbide material. © 2002 Elsevier Science B.V. All rights reserved.|
|Source Title:||Materials Science and Engineering B: Solid-State Materials for Advanced Technology|
|Appears in Collections:||Staff Publications|
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