Please use this identifier to cite or link to this item: https://doi.org/10.1021/jp4099733
Title: Modification of PTCDA/Co interfacial electronic structures using Alq 3 buffer layer
Authors: Cao, L.
Wang, Y.-Z.
Qi, D.-C. 
Zhong, J.-Q.
Wee, A.T.S. 
Gao, X.-Y. 
Issue Date: 5-Dec-2013
Citation: Cao, L., Wang, Y.-Z., Qi, D.-C., Zhong, J.-Q., Wee, A.T.S., Gao, X.-Y. (2013-12-05). Modification of PTCDA/Co interfacial electronic structures using Alq 3 buffer layer. Journal of Physical Chemistry C 117 (48) : 25636-25642. ScholarBank@NUS Repository. https://doi.org/10.1021/jp4099733
Abstract: The interfacial electronic structures and energy level alignment between 3,4,9,10-perylene-tetracarboxylic-dianhydride (PTCDA) and Co substrate with a tris-(8-hydroxy-quinoline) aluminum (Alq3) buffer layer have been investigated using synchrotron-based photoemission spectroscopy (PES). It was found that the electronic structures at the PTCDA/Co interface can be modified by inserting an Alq3 buffer layer. As long as equilibrium is established at PTCDA/Alq3/Co interfaces, the electron injection barrier (Δe) at the PTCDA/Co interface decreases by 0.3 eV with an Alq3 buffer layer, which is independent of the thickness of the Alq3 interlayer. This energy level alignment can be satisfactorily explained by substrate to organic overlayer charge transfer through the buffer layer. Our findings have potential applications in spin-valve devices based on n-type organic materials by reducing the interfacial electron injection barrier. © 2013 American Chemical Society.
Source Title: Journal of Physical Chemistry C
URI: http://scholarbank.nus.edu.sg/handle/10635/97238
ISSN: 19327447
DOI: 10.1021/jp4099733
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