Please use this identifier to cite or link to this item: https://doi.org/10.1103/PhysRevB.75.125319
Title: Mechanisms of silicon diffusion in erbium silicide
Authors: Peng, G.W. 
Feng, Y.P. 
Huan, A.C.H.
Bouville, M.
Chi, D.Z.
Srolovitz, D.J.
Issue Date: 22-Mar-2007
Source: Peng, G.W., Feng, Y.P., Huan, A.C.H., Bouville, M., Chi, D.Z., Srolovitz, D.J. (2007-03-22). Mechanisms of silicon diffusion in erbium silicide. Physical Review B - Condensed Matter and Materials Physics 75 (12) : -. ScholarBank@NUS Repository. https://doi.org/10.1103/PhysRevB.75.125319
Abstract: First-principles methods are employed to determine how Si diffuses in the layered metal silicide Er Si2-x. Si diffusion is found to be extraordinarily anisotropic, with the migration barrier associated with Si diffusing across Er planes nearly four times larger than within the Si planes. The activation energy for in-plane diffusion of Si decreases by 20% when Er Si2-x is grown heteroepitaxially on Si(001), as a result of the epitaxial strain. This effect is associated with how strain modifies the formation energy of the diffusing defect and changes the energy landscape of diffusion. These results are consistent with experimental observations of defect formation in heteroepitaxial Er Si2-x films on Si(001). © 2007 The American Physical Society.
Source Title: Physical Review B - Condensed Matter and Materials Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/97174
ISSN: 10980121
DOI: 10.1103/PhysRevB.75.125319
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