Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2970036
Title: Lu2O3/Al2O gate dielectrics for germanium metal-oxide-semiconductor devices
Authors: Darmawan, P.
Chan, M.Y.
Zhang, T.
Setiawan, Y.
Seng, H.L.
Chan, T.K. 
Osipowicz, T. 
Lee, P.S.
Issue Date: 2008
Citation: Darmawan, P., Chan, M.Y., Zhang, T., Setiawan, Y., Seng, H.L., Chan, T.K., Osipowicz, T., Lee, P.S. (2008). Lu2O3/Al2O gate dielectrics for germanium metal-oxide-semiconductor devices. Applied Physics Letters 93 (6) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2970036
Abstract: Effect of Ge out diffusion into Lu2O3/Al2O high- k dielectric stack was investigated. Increasing Ge signal intensity with increasing annealing temperature was observed, which suggests that there may be excessive Ge incorporation into the high- k film. The electrical measurement shows an improvement of the k value with annealing temperature, as well as an increasing trend in the leakage current density suggesting degradation in electrical performance due to Ge incorporation. Our work suggests that 8.8 at. % of Ge in the film is excessive and result in degradation of the electrical performance of the device due to the increased leakage current. © 2008 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/97111
ISSN: 00036951
DOI: 10.1063/1.2970036
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