Please use this identifier to cite or link to this item:
|Title:||Lu2O3/Al2O gate dielectrics for germanium metal-oxide-semiconductor devices|
|Citation:||Darmawan, P., Chan, M.Y., Zhang, T., Setiawan, Y., Seng, H.L., Chan, T.K., Osipowicz, T., Lee, P.S. (2008). Lu2O3/Al2O gate dielectrics for germanium metal-oxide-semiconductor devices. Applied Physics Letters 93 (6) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2970036|
|Abstract:||Effect of Ge out diffusion into Lu2O3/Al2O high- k dielectric stack was investigated. Increasing Ge signal intensity with increasing annealing temperature was observed, which suggests that there may be excessive Ge incorporation into the high- k film. The electrical measurement shows an improvement of the k value with annealing temperature, as well as an increasing trend in the leakage current density suggesting degradation in electrical performance due to Ge incorporation. Our work suggests that 8.8 at. % of Ge in the film is excessive and result in degradation of the electrical performance of the device due to the increased leakage current. © 2008 American Institute of Physics.|
|Source Title:||Applied Physics Letters|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Nov 14, 2018
WEB OF SCIENCETM
checked on Nov 6, 2018
checked on Oct 12, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.