Please use this identifier to cite or link to this item: https://doi.org/10.1016/S0167-577X(01)00457-8
Title: Low-field magnetoresistance in oxygen-deficient La0.5Sr0.5MnO3 thin films as approached by spin-polarized tunneling model
Authors: Yuan, G.L.
Liu, J.-M.
Chan, H.L.W.
Choy, C.L.
Ong, C.K. 
Liu, Z.G.
Du, Y.W.
Keywords: Low-field magnetoresistance
LSMO
Spin-polarized tunneling
Issue Date: Mar-2002
Citation: Yuan, G.L., Liu, J.-M., Chan, H.L.W., Choy, C.L., Ong, C.K., Liu, Z.G., Du, Y.W. (2002-03). Low-field magnetoresistance in oxygen-deficient La0.5Sr0.5MnO3 thin films as approached by spin-polarized tunneling model. Materials Letters 53 (1-2) : 76-82. ScholarBank@NUS Repository. https://doi.org/10.1016/S0167-577X(01)00457-8
Abstract: The low-field magnetoresistance (LFMR) of oxygen-deficient La0.5Sr0.5MnO3 (LSMO) thin films deposited by laser ablation under various oxygen pressures is studied with characterization of the microstructural, electro- and magneto-transport properties in relation to oxygen vacancies, and explained by the spin-polarized tunneling (SPT) model. Significant oxygen deficiency dependence of these properties is revealed. It is argued that the insulating and non-ferromagnetic zones centered with the oxygen vacancies, together with grain boundaries, form barriers for electron tunneling, and enhanced low-field magnetoresistance is obtained for the films with optimized oxygen deficiency. The high spin-flip probability for the films with serious oxygen deficiency is predicted. © 2002 Elsevier Science B.V. All rights reserved.
Source Title: Materials Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/97105
ISSN: 0167577X
DOI: 10.1016/S0167-577X(01)00457-8
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