Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3421543
Title: Large thermoelectric figure of merit in Si1-x Gex nanowires
Authors: Shi, L.
Yao, D.
Zhang, G.
Li, B. 
Issue Date: 26-Apr-2010
Citation: Shi, L., Yao, D., Zhang, G., Li, B. (2010-04-26). Large thermoelectric figure of merit in Si1-x Gex nanowires. Applied Physics Letters 96 (17) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3421543
Abstract: By using first-principles electronic structure calculation and Boltzmann transport equation, we investigate composition effects on the thermoelectric properties of silicon-germanium (Si1-x Gex) nanowires (NWs). The power factor and figure of merit in n-type Si1-x Ge x wires are much larger than those in their p-type counterparts with the same Ge content and doping concentration. Moreover, the maximal obtainable figure of merit can be increased by a factor of 4.3 in n-type Si0.5 Ge0.5 NWs, compared with the corresponding values in pure silicon nanowires (SiNWs). Given the fact that the measured ZT of n-type SiNW is 0.6∼1.0, we expect Z T value of n-type Si1-x Gex NWs to be 2.5∼4.0. © 2010 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/97043
ISSN: 00036951
DOI: 10.1063/1.3421543
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