Please use this identifier to cite or link to this item:
https://doi.org/10.1063/1.3224188
Title: | Lanthanide-based graded barrier structure for enhanced nanocrystal memory properties |
Authors: | Chan, M.Y. Chan, T.K. Osipowicz, T. Chan, L. Lee, P.S. |
Issue Date: | 2009 |
Source: | Chan, M.Y., Chan, T.K., Osipowicz, T., Chan, L., Lee, P.S. (2009). Lanthanide-based graded barrier structure for enhanced nanocrystal memory properties. Applied Physics Letters 95 (11) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3224188 |
Abstract: | A memory structure comprising Ge nanocrystals and lanthanide-based charge trapping dielectric stack was fabricated to realize a self-aligned graded barrier structure. By exploiting efficient charge trapping of the nanocrystals embedded in the heterogeneous high- k dielectric, strong memory effect was manifested by a large counterclockwise capacitance-voltage hysteresis of 2.7 V under a low voltage operation of ±4 V. The high- k barrier with graded composition provides a favorable confinement barrier for improved hole retention with simultaneous enlargement of the memory window. © 2009 American Institute of Physics. |
Source Title: | Applied Physics Letters |
URI: | http://scholarbank.nus.edu.sg/handle/10635/97033 |
ISSN: | 00036951 |
DOI: | 10.1063/1.3224188 |
Appears in Collections: | Staff Publications |
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