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|Title:||Lanthanide-based graded barrier structure for enhanced nanocrystal memory properties|
|Citation:||Chan, M.Y., Chan, T.K., Osipowicz, T., Chan, L., Lee, P.S. (2009). Lanthanide-based graded barrier structure for enhanced nanocrystal memory properties. Applied Physics Letters 95 (11) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3224188|
|Abstract:||A memory structure comprising Ge nanocrystals and lanthanide-based charge trapping dielectric stack was fabricated to realize a self-aligned graded barrier structure. By exploiting efficient charge trapping of the nanocrystals embedded in the heterogeneous high- k dielectric, strong memory effect was manifested by a large counterclockwise capacitance-voltage hysteresis of 2.7 V under a low voltage operation of ±4 V. The high- k barrier with graded composition provides a favorable confinement barrier for improved hole retention with simultaneous enlargement of the memory window. © 2009 American Institute of Physics.|
|Source Title:||Applied Physics Letters|
|Appears in Collections:||Staff Publications|
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